Effects of Applied Mechanical Uniaxial and Biaxial Tensile Strain on the Flatband Voltage of (001), (110), and (111) Metal–Oxide–Silicon Capacitors

Abstract

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> The flatband-voltage shift of metal–oxide–silicon capacitors is investigated under the application of low-level stress (up to 220 MPa of biaxial stress and 380 MPa of uniaxial stress) to different substrate orientations. We propose that the flatband-voltage shift be modeled as the net effect of silicon-band-edge shifts and modulation of the separation between the band edge and the Fermi level under low levels of applied mechanical strain. For the (001) n-type substrate, a negative flatband-voltage shift is observed due mainly to the downward shift of the conduction-band edge, while a positive flatband-voltage shift is observed for the (001) p-type substrate due to the upward shift of the valence-band edge. For the uniaxial tensile strain on n-substrate capacitors for (110) and (111) substrates, the modulation of band-edge and Fermi-level separation by the conduction-band density of states exceeds the downward shift of the conduction band, which induces a positive flatband shift that is distinct from that observed in the (001) n-substrate. The shift of the band edges is determined by the proposed model and compared with theoretical calculations. </para>