Abstract
Pure and doping with Zn material on CeO2 films were formed on the substrate at 250 °C and further it was annealing at 350 °C in the atmosphere for 2 h using spray pyrolysis technique. Noticeable variation in the crystallite size, porosity, band gap and room temperature sensing response was observed due to Zn-doping. The sensing studies namely response of resistivity, sensitivity and response-recovery characteristics of both films were compared at 32 °C. The appreciable sensing response was observed for doping with Zn ions into CeO2 film in formaldehyde at a lower detection (0.5 ppm) at 32 °C.
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