Abstract
Thin films of pentacene were deposited thermally onto glass substrates and annealed at 323K, 373K, 423K, 473K and 523K in high vacuum. Effect of annealing on the morphological and structural properties of these films was studied. X-ray diffraction patterns confirmed the crystalline nature of the films. Electrical studies for the use as write once read many (WORM) memory devices were done for the vacuum deposited pentacene thin films on indium tin oxide coated glass. Due to annealing, a sharp increase in the ON/OFF ratio of current and a decrease in threshold voltage were observed at around 373K. This device showed a stable switching with an ON/OFF current ratio as high as 109 and a switching threshold voltage of 1.35V. The performance of the device degraded above 423K due to the changes in the crystallinity of the film.
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