Abstract
In this paper, the effect of thicknesses on vacuum deposited pentacene (C22H14) thin films on ITO coated glass substrate for use as write once read many (WORM) memory devices are reported. RV characteristics of pentacene devices deposited for different thicknesses of 50 nm, 100 nm and 200 nm at a deposition rate of 20 Å/s were studied. Results revealed that the ON/OFF ratio was more for the device with active material deposited at a thickness of 100 nm. This device showed a stable switching with an ON/OFF current ratio as high as nearly 108 with a switching threshold voltage of 1.14 V. The irreversible switching of all the devices makes it suitable for a write once read many memory device applications. The structural studies of these pentacene thin films on glass substrates were also done and the dependence of the grain size of the films with thickness is also reported.
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