Abstract
In this paper, the effect of deposition rates on the vacuum deposited pentacene (C22H14) thin films on ITO coated glass substrate for use as write once read many (WORM) memory devices are reported. IV characteristics of pentacene devices deposited for different deposition rates of 5Å/s, 10Å/s and 20Å/s were studied. Results revealed that the ON/OFF ratio was more for the device with active material deposited at a higher deposition rate of 20Å/s. This device showed a stable switching with an ON/OFF current ratio as high as nearly 108 and a retention time of more than 5x104s with a switching threshold voltage of 1.1V. The irreversible switching of all the devices makes it suitable for a write once read many memory device applications. The structural and morphological studies of these pentacene thin films on glass substrates were also done and the dependence of the grain size of the films with deposition rate is also reported.
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