Abstract
In this letter, we report the effect of UV-ozone treatments on the electrical characteristics of InGaAs/InP heterostructure bipolar transistors (HBTs). For treatments of less than 10 min, the HBT’s current gain increased with the UV-ozone exposure. This improvement is attributed to a passivation of the extrinsic base. For exposures longer than 10 min, the current gain is reduced. An increase of the base collector leakage current, leading to a degradation of the HBT’s breakdown voltage, was observed after only about 2 min of UV-ozone treatment.
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