Abstract
The noise characteristics of InP-based heterostructure bipolar transistors (HBTs) are studied from low frequency to microwave frequency. The non-equilibrium minority carrier transport in the thin base region is very effective in reducing the 1/f noise current at low frequency as well as reducing the uncorrelated shot noise current at high frequency. Experimentally, a very low 1/f noise corner frequency of 1.55 kHz is obtained in AlInAs/InGaAs HBTs with a 70 nm-thick base. This is the lowest 1/f corner frequency amongst any compound semiconductor devices reported to date. Minimum noise figures of 0.46 dB, 2.0 dB and 3.33 dB are also demonstrated at 2 GHz, 10 GHz and 18 GHz, respectively, with InP/InGaAs HBTs with a 35 nm-thick base and 3.5 /spl mu/m/spl times/3.5 /spl mu/m emitter.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
