Abstract
The growth striation of impurity segregation and electrical properties of Ga0.03In0.97Sb single crystals grown by the Czochralski method in an ultrasonic field have been investigated. It is established that ultrasonic irradiation of the melt during growth significantly decreases the growth striation (in particular, it eliminates striations spaced at a distance of more than 14 μm). The Ga0.03In0.97Sb single crystals grown in an ultrasonic field had a higher charge-carrier mobility and thermoelectric power in comparison with the single crystals grown without ultrasound.
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