Abstract
GaxIn1 − xSb solid solution single crystals (x = 0.03–0.09) have been grown. The dislocation density and electrophysical parameters are measured. A technique for the growth GaxIn1 − xSb single crystals by the Czochralski method with GaSb polycrystal feed is developed. The conditions for the growth Ga0.08In0.92Sb single crystals with a more homogeneous distribution of Ga along the bulk are determined.
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