Abstract
Effect of ultrasonic waves on growth striations and electrophysical properties of Ga x In 1− x Sb single crystals with x up to 0.03 have been investigated. A decrease in the ultrasound field of growth striations in Ga x In 1− x Sb single crystals has been observed. The carrier concentration and thermal emf in these crystals were larger than that in crystals pulled without ultrasound.
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