Abstract
The effect of thermal annealing and neutron irradiation in 6H-SiC implanted with silver at 350 °C and 600 °C have been investigated using Rutherford backscattering spectrometry (RBS), Rutherford backscattering spectrometry in channeling mode (RBS-C) and scanning electron spectroscopy (SEM). Implantation at 600 °C and 350 °C caused the 6H-SiC to retain crystallinity. The 600 °C samples had less distortions compared to 350 °C implanted samples. Annealing of the radiation damage created during implantation is also reported. No diffusion of silver was detected after thermal annealing but a shift of the silver peak toward the surface due to thermal etching was observed. The amount of etched SiC has also been estimated by comparing the peak position before and after annealing. Similarly no diffusion was observed after low dose neutron irradiation of the samples.
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