Effect of the roughness on the photoinduced growth of crystalline tellurium on MoTe2 matrix

Abstract

In this work, a series of 5 nm thick films of molybdenum oxide (MoO3) were synthesized on SiO2/Si substrates by magnetron sputtering of molybdenum in low vacuum conditions. We used closed-space sublimation (CSS) to tellurize the Mo oxide and to produce pure-phase 1 T′-MoTe2 films by controlling the temperature inside the CSS reactor. Surface analyses showed that tellurium spreads over the surface of the as-grown films, forming localized crystalline precipitates whose distribution depends on the tellularization time. From Raman spectroscopy investigations, we observed that the exposure of these films to visible light leads to a growth of a highly-ordered trigonal phase of tellurium. The intensity evolution of the vibrational modes related to the crystalline phase of tellurium allows us to perform a quantitative analysis of the crystallization. Our results indicate that this process is consistent with the Kolmogorov-Johnson-Mehl-Avrami (KJMA) theory for the overall crystallization process. By the characteristic growth exponent, we introduce a more specific model which takes into account the diffusion and the dissociation of tellurium chains, which is used to probe how the effective growth rate is affected by the roughness of the samples.