Effect of the PbO x thickness on the microstructure and electrical properties of PLT thin films prepared by RF magnetron sputtering

Abstract

The (Pb 0.90La 0.10)Ti 0.975O 3 (PLT) thin films with different thicknesses of PbO x buffer layers were deposited on the Pt(111)/Ti/SiO 2/Si(100) substrates by RF magnetron sputtering technique. The PbO x buffer layer leads to the (100) orientation of the PLT thin films. Effects of the PbO x thickness on the microstructure and electrical properties of the PLT thin films were investigated. The experimental results show that the PbO x thickness plays an important role on the orientation, phase purity, domain structure, and electrical properties of the PLT thin films. The PLT thin films with proper PbO x thickness possess highly (100) orientation, high phase purity, strong intensity of out of plane polarization, and good electrical properties. It is concluded that the PbO x thickness between PLT thin films and Pt coated Si substrate is very critical to obtain good electrical properties.