Abstract
Highly (100)- and (111)-oriented (Pb 0.90La 0.10)Ti 0.975O 3 (PLT) thin films were deposited on the Pt(111)/Ti/SiO 2/Si(100) substrates by radio frequency magnetron sputtering technique with and without a PbO x buffer layer. The effect of crystallization orientation on the domain structure and ferroelectric properties of PLT thin films was investigated. The results show that the PLT thin films with different orientations possess different intensity of out of plane polarization and ferroelectric properties, (111)-oriented PLT thin films with stronger out of plane polarization exhibit higher remnant polarization (2 P r = 45.6 μC/cm 2) than these of random-oriented PLT thin films (2 P r = 33.9 μC/cm 2), and (100)-oriented PLT thin films (2 P r = 26.3 μC/cm 2) at the same applied field.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
