Effect of temperature on electrical characteristics of single electron transistor

Abstract

Static and transfer characteristics of single electron transistor are analytically calculated as a function of operating temperature under suitable biasing conditions. Computation is carried out assuming quantum mechanical coupling between source and drain; along with stochastic nature of tunneling process. Fermi Golden Rule is used to calculate free energy changes at both source and drain ends, and corresponding tunneling probabilities, which are governing factor for determining drain current. Result shows that significant variation is observed at lower temperature operation in terms of drain current and differential conductance. It is found out that at low horizontal bias, transfer characteristics is greatly influenced at lower temperature, whereas moderate gate voltage is required to observe meaningful fluctuations in static characteristics. Magnitudes of differential conductance and transconductance increase at higher temperature. Results have critical importance for operation of the device at different temperature conditions.