Analytical computation of transfer characteristics of single electron transistor

Abstract

Transfer characteristics of single electron transistor are analytically worked out as function of different tunneling parameters. Source and drain are quantum mechanically coupled by quantum dot for carrier transport, and tunneling mechanism is taken as stochastic in nature. Tunneling probabilities and corresponding free energy changes are computed using Fermi Golden Rule (FGR). Equivalent circuit parameters are tuned within appreciable limit to find out the dependence of drain current on gate bias. Results are important for computing transconductance of the device.