Effect of equivalent circuit parameters on current-voltage characteristics in single electron transistor

Abstract

Effect of tunneling resistances and tunneling capacitances on the current-voltage characteristics of single electron transistor are analytically computed assuming source and drain ends are connected by quantum dot. Steady state master equation is solved by considering tunneling mechanism a stochastic process, and free energy changes are calculated as a function of equivalent circuit parameters and background charge. Tunneling probabilities at drain and source ends are determined using Fermi's Golden Rule. Threshold values of all the circuit parameters are calculated below or above which degraded performances can be obtained.