Abstract
Cu 2O/p-silicon Schottky junction was fabricated by using the pulsed laser deposition technique. The deposited Cu 2O film is characterized using the X-ray diffraction technique, UV–visible spectroscopy, and electrical method. The Cu 2O film is amorphous in nature with optical bandgap of 2.2 eV. Temperature dependence of current–voltage characteristics of Cu 2O/p–silicon Schottky junction has been studied in the range 200–300 K. The junction parameters such as ideality factor and barrier height were estimated using the thermionic emission model. It is observed that barrier height increases with the increase in temperature while ideality factor decreases with temperature.
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