Abstract
A high concentration of Er3+ without clustering issues is essential in an Er-doped waveguide amplifier as it is needed to produce a high gain and low noise signal. Ultrafast laser plasma doping is a technique that facilitates the blending of femtosecond laser-produced plasma from an Er-doped TeO2 glass with a substrate to form a high Er3+ concentration layer. The influence of substrate temperature on the morphological, structural, and optical properties was studied and reported in this paper. Analysis of the doped substrates using scanning electron microscopy (SEM) confirmed that temperatures up to approximately 400 °C are insufficient for the incoming plasma plume to modify the strong covalent bonds of silica (SiO2), and the doping process could not take place. The higher temperature used caused the materials from Er-doped tellurite glass to diffuse deeper (except Te with smaller concentration) into silica, which created a thicker film. SEM images showed that Er-doped tellurite glass was successfully diffused in the Si3N4. However, the doping was not as homogeneous as in silica.
Highlights
TeO2 glass with a substrate to form a high Er3+ concentration layer
Er-doped fibre amplifier (EDFA) is an excellent candidate for signal amplification at various points in such networks because it is compatible with fibre light-wave systems [7]
Er-doped waveguide amplifier (EDWA) inherits EDFA’s magnificent performance but with a smaller size, and it can be fabricated on silicon platforms compatible with complementary metal-oxide semiconductor (CMOS) processing [11]
Summary
The doped layer on SOS and Si3 N4 -on-silicon substrates was fabricated via the ULPD technique [18,21]. The initial thickness for SiO2 and Si3 N4 layers on silicon was 1 μm. A commercial Coherent Ti: Sapphire LIBRA laser with a pulse duration of 100 fs, a wavelength centred at 800 nm, a repetition rate of 1 kHz, and an energy of 50 μJ was used in this work. The fs laser beam was focused on the target glass 0.5%Er2 O3 , Er-TZN) surface at an incident angle of 60◦ from normal. The substrate was heated to a specific temperature (400–700 ◦ C) at a ramp rate of 50 ◦ C/min under an oxygen ambient pressure of 70 mTorr. The laser ablation process was carried out for 4 h
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