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Abstract
Electrical properties of a series of germanium films deposited onto glass substrate held at temperature between 100 and 300°C have been investigated. There is no significant difference in the structural and electrical characteristics of the amorphous films deposited at the substrate temperature lower than 230°C. Otherwise, the results obtained with the substrate temperature higher than 230°C are as follows: (a) the degree of the disorder in structure decreases and crystal orientation is observed, (b) the resistivity decreases, (c) the slope of the log resistivity against inverse temperature (1/T) decreases, (d) the slope of the log resistivity against 1/T1/4 changes from linear to non-linear, and (e) the slope of the log current against square root of the electric field increases. These results can be explained by considering of the diffused-localised states formed by the disorder near the valence band edge.
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