Effect of substrate temperature on electrical properties of (Al/p-Cu3SbS3 /Mo) Schottky diodes grown by vacuum thermal evaporation

Abstract

This study highlights some physical properties of Schottky diodes (Al/p-Cu3SbS3/Mo) fabricated by simple deposition of Aluminum on the front side of the Cu3SbS3 thin films. p-Cu3SbS3 were grown by by thermal evaporation method onto heated and unheated Mo substrates. The current–voltage (I–V) characteristics show the interaction between the Aluminum and p-Cu3SbS3 give a Schottky contact. The saturation currents, the ideality factors and series resistances were extracted from the experimental data. Moreover, the capacitance–voltage (C–V) characteristics reveal the values of the barrier height of the heterostructures. The Schottky diode at a substrate temperature of 150 °C showed the strongest barrier height (0.59 eV) and the lowest leakage current (1.08 × $${10^{ - 6}}{\text{A}}$$ ). In order to evaluate the conduction processes of the samples, the impedance spectroscopy technique were used. To model these results, equivalent electrical circuits were used. Finally, from the analysis of the data, we found a decrease of the entire serial resistances Rs, the parallel resistances Rp and the capacitances Cp when the increase of the temperature.