Abstract
Electrical properties of Al/NiPc/Ag surface type Schottky diode fabricated by vacuum thermal evaporation have been investigated. The current–voltage ( I– V) and capacitance–voltage ( C– V) characteristics are measured at room temperature in dark. The electronic parameters such as ideality factor, barrier height, series resistance and shunt resistance of the Schottky diode are calculated from the current–voltage and capacitance–voltage characteristics. The charge carrier concentration and built in potential values of 9.1×10 15 cm −3 and 1.6 V, respectively, are obtained from the C– V plot. The value of conductivity and mobility has also been calculated. In addition, the values of ideality factor and series resistance are also verified by using Cheung's function. Frequency-dependent measurements on this Schottky barrier diode show that the capacitance is reduced at high frequency.
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