Effect of substrate misorientation on the growth of GaxIn1−x P lateral quantum wells

Abstract

We report the effects of misoriented GaAs substrates and varied substrate temperatures on the formation of GaxIn1−xP lateral quantum wells (LQWs) by the strain-induced lateral-layer ordering (SILO) process. Nominally [001] GaAs on-axis substrates, [001] substrates cut 2° off toward the [110] direction, and [001] substrates cut 2° off toward the [1̄10] direction were used to simultaneously grow LQWs. The samples were characterized using plan-view and cross-sectional transmission electron microscopy and polarized photoluminescence spectroscopy. We found that regardless of the substrate misorientation or substrate growth temperature, the SILO process induced LQWs always formed along the [1̄10] direction; primarily determined by the direction of the group-V dimer bonds on the surface during growth.