Abstract
The effect of a strontium ruthenate seed layer on the dielectric properties of thin films was investigated. The thin films were deposited by plasma-enhanced atomic layer deposition using titanium tetra-isopropoxide and bis(dipivaloylmethanato) strontium as precursors and oxygen as an oxidant. A strontium ruthenate seed layer was formed through the deposition of ultrathin SrO and a postannealing process. The thin films deposited on a seed layer, prepared by deposition of SrO and postannealing prior to deposition, showed considerably enhanced dielectric properties in comparison to films deposited on Ru directly; that was attributed to enhancement of the films’ crystallinites and a reduction of low- interfacial layers. For optimization of seed-layer formation, the dependency of the inserted SrO layer thickness on the dielectric properties of the films was investigated for a SrO thickness range of . The thick thin film on the seed layer formed by deposition of a thick SrO layer and postannealing exhibited a dielectric constant of about 75 [equivalent oxide thickness ], which meets the requirement of dynamic random access memory technology.
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