Abstract
Pb(Zr, Ti)O3 thin films were successfully prepared on (111)Pt/IrO2/SiO2/(100)Si substrates using SrTiO3 seeds at 290 oC by RF inductive heating type and 350 oC by resistive heating type metalorganic chemical vapor deposition method (MOCVD), respectively. The SrTiO3 was chosen as seed layers and prepared by pulsed laser deposition method. The crystal structures and orientations of SrTiO3 seeds were changed by deposition temperature. In the case of preparation with RF inductive heating MOCVD, the remanent polarization (2Pr) and coercive field (2Ec) were 42 μC/cm2 and 256 kV/cm, respectively.
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