Abstract
Hydrodynamic model for magnetised semiconductor plasma along with coupled mode approach has been used to study parametric dispersion and threshold characteristics for relativistic mass variation of electrons. Expression for nonlinear second order susceptibility and threshold pump field required to incite parametric interaction in semiconductor plasma has been derived. Effects of various parameters on threshold pump field as well as dispersion coefficient have been plotted for a doped InSb crystal duly irradiated by CO2 laser at 77K. External magnetic field and doping concentrations emerged as control parameters for favourable threshold and dispersion characteristics of the medium.
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