Abstract
Precursor structures of Mo/CuGa/In, Mo/In/CuGa, Mo/In/CuGa/In and Mo/CuGaIn were prepared on thin sodium-free glass by the sputtering of CuGa and In targets. In-situ phase evolution of precursors with temperature was investigated by a high-temperature X-ray diffraction system, which verified the existence and transformation of several intermetallics: Cu 2In, Cu 11In 9, Cu 3Ga, Cu 7In 3, Cu 9Ga 4 and Cu 16In 9 as well as elemental In. MoSe 2 layers produced during selenization were detected by scanning electron microscope and X-ray diffraction, with their thicknesses varying by precursor structure. Adhesion strength of Cu(InGa)Se 2 to each Mo layer was assessed by applying CdS chemical bath deposition process to each sample.
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