Abstract
The effect of postoxidation cooling of Si wafers in an oxygen ambient on the interface states introduced by 50 keV B + ions implantation into SiSiO 2 structures has been studied using thermally stimulated current (TSC) measurements. The oxide thickness is 105 nm. The implantation dose is 1.2 × 10 12 ions cm −2. It is shown that the postoxidation cooling reduces the interface state density of the shallow traps introduced by ion implantation. The energy of the traps and the trap density are determined.
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