Abstract
Trapping levels in polycrystalline CVD diamond before and after ion implantation have been investigated using thermally stimulated currents (TSC). The activation energy of the dark current is reduced after ion implantation because of the GR1 centre and the energy levels formed by this defect. However, introduction of this additional defect does not effect the kinetic parameters of the dominant trap responsible for the observed TSC. Nevertheless, the implantation does effect the trapped carrier density suggesting that the GR1 centre acts as a deep trapping centre.
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