Abstract
This paper reports that ion implantation to a dose of 1×1017 ions/cm2 was performed on c-axis-orientated ZnO thin films deposited on (0001) sapphire substrates by the sol-gel technique. After ion implantation, the as-implanted ZnO films were annealed in argon ambient at different temperatures from 600-900 °C. The effects of ion implantation and post-implantation annealing on the structural and optical properties of the ZnO films were investigated by x-ray diffraction (XRD), photoluminescence (PL). It was found that the intensities of (002) peak and near band edge (NBE) exitonic ultraviolet emission increased with increasing annealing temperature from 600-900 °C. The defect related deep level emission (DLE) firstly increased with increasing annealing temperature from 600−750 °C, and then decreased quickly with increasing annealing temperature. The recovery of the intensities of NBE and DLE occurs at ~ 850 °C and ~ 750 °C respectively. The relative PL intensity ratio of NBE to DLE showed that the quality of ZnO films increased continuously with increasing annealing temperature from 600 − 900 °C.
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