Abstract
Tantalum oxide thin films were formed on silicon (111) substrates kept at room temperature (303 K) by reactive sputtering of tantalum target in the presence of the mixture of oxygen and argon gases. The as-deposited films were annealed in air for an hour in the temperature range 573 - 873 K. The effect of annealing on the chemical binding configuration, structure and electrical properties of tantalum oxide films was systematically studied.
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