Abstract
Thin ZnO films were deposited on silicon (Si) substrates by radio frequency (RF) magnetron sputtering method at 300°C and the post-annealing for the as-deposited ZnO films was carried out at different temperatures of 500, 700 and 800°C respectively. The structure and optical properties of the ZnO films at different annealing temperatures were investigated by X-ray diffraction (XRD), atomic force microscopy (AFM) and photoluminescence (PL), respectively. The XRD patterns show that all the ZnO films have a high preferred c-axis orientation, which is perpendicular to the Si substrates. The grain size increases as the increasing the annealing temperature, as indicated from both XRD patterns and AFM images. Besides that, the ZnO film at annealing temperature of 700°C shows the strongest UV emission intensity and the narrowest full width at half maximum (FWHM).
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