Abstract
Pb0.4Sr0.6TiO3 thin films with good fatigue endurance were crystallized at low temperature compatible with the current semiconductor technology. The effect of polarization switching cycles on the ferroelectric properties, dielectric response, and Rayleigh constant in thin films were systematically investigated. The results indicated that the polarization switching improves the extrinsic dielectric response and dielectric nonlinearity of these thin films because of the dielectric response of the oxygen vacancy to the applied electric field, while shows weak effect on the intrinsic dielectric and ferroelectric response. Moreover, the Rayleigh constant showed different evolutions in the films prepared at different substrate temperatures.
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