Abstract
In advanced semiconductor manufacturing, with deep contact holes with an aspect ratio higher than sixty in 3D-NAND memory, higher aspect ratio patterning is one of the important issues in advanced semiconductor manufacturing. In this work, we used an in-situ ATR-FTIR spectroscopy technique to characterize the wetting of nanostructures embedded in a silica matrix by UPW and electrolyte solutions as a function of pH. There was little influence of pH on the wetting of nanoholes in the studied range of 1 to 4, but wetting seemed to be less close to the isoelectric point. Also, HCl seemed to lend a better wetting compared to HI, in opposition to their structure breaking effect according to Marcus. A correlation was observed between these observations and the CO2 solubility, indicative of the influence of water structuring.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
