Abstract
Ferroelectric Bi(Ni1/2Ti1/2)O3–PbTiO3 (BNT–PT) thin films near the morphotropic phase boundary (MPB) with different amount of excess lead (0, 10, and 20%) were successfully deposited onto Pt(111)/Ti/SiO2/Si substrates via a chemical solution approach. The effects of excess lead on the microstructure, dielectric and piezoelectric properties, and energy-storage performance of the thin films were investigated in detail. X-ray diffraction results revealed that the films showed an increasing (100)-orientation with an increasing amount of excess lead. Dielectric, ferroelectric, and current–voltage measurements showed that the films with more excess lead exhibited an enhanced dielectric constant and greater back-switch behavior, while the smaller leakage current density. As a result, the energy-storage density was also markedly improved from 22.8 to 50.2 J/cm3 under an electric field of 2250 kV/cm. The effective piezoelectric constant d33 increased from 41.5 to 70.1 pm/V with increasing excess lead from 0 to 20%.
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