Abstract
Relaxor ferroelectric Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMN–PT) thin films with [001] preferential orientation were deposited on platinized silicon wafers by a sol–gel method, in which a PbO seeding layer was involved. The influences of annealing temperature on the crystal phase, microstructure, and electrical properties of the PMN–PT films were investigated. Pyrochlore-free perovskite PMN–PT films could be formed on PbO-seeded Pt(111)/Ti/SiO2/Si wafers at 800 °C, which was also the optimal annealing temperature for endowing the film with the best ferroelectric and dielectric properties. The enhanced properties were attributed to the improved crystallinity and microstructure. The leakage behaviors of the PMN–PT films annealed at different temperatures were also measured and discussed.
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