Abstract
We have studied the oxygen-plasma effect on spin-on-glass (SOG) on the growth of low-temperature polycrystalline silicon (LTPS) by metal-mediated crystallization. The SOG buffer was coated on glass, and then it was exposed to oxygen plasma before the deposition of amorphous silicon (a-Si) to turn the SOG surface to hydrophilic. The a-Si on SOG was crystallized by metal-induced crystallization through a cap. The crystalline structure depended on the surface treatment: disk-shaped grains were grown on the O 2 -plasma-treated SOG, but needlelike grains were on the SOG without O 2 -plasma treatment. The p-channel poly-Si thin film transistor using the LTPS on O 2 -plasma-treated surface exhibited a field-effect mobility of 91.1 cm 2 /V s, a threshold voltage of -8.5 V, and a gate voltage swing of 1.2 V/dec.
Published Version
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