Abstract
Heat transfer with homogeneous structures of Si3N4 system and the effects of oxygen defects in the Si3N4 grains are reported by Jung Woo Lee and co-workers in article number 2100566. The oxygen defects in the grains are moving to the surface of the grains and effectively captured by oxygen getter. The inhibition of the Si3N4 grain oxidization improves a spontaneous dissipation of thermal energy.
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