Effect of Oxygen Flow Rate on Fabrication of ZnO Thin Films Using Cold He Plasma at Atmospheric Pressure

Abstract

Homogeneous nonequilibrium low temperature plasma was generated under atmospheric pressure by high voltage pulsed power (1 kV, 20 kHz) excitation of He gas or mixture of He and O2 gases. Using this cold plasma, ZnO thin films were fabricated on glass substrate exposed to air by feeding Zn-MOPD into the plasma with He carrier gas. Dependence of O2 gas flow rate on optical transmittance of the ZnO films and resistivity were investigated. In addition, crystallinity and microstructure of the films was studied by XRD measurement and FE-SEM observation.