Abstract
AbstractUnder atmospheric pressure, homogeneous non‐equilibrium cold plasma was generated stably by high voltage pulsed power (1 kV, 20 kHz) excitation of He and O2 gases. By feeding Zn‐MOPD (C18H30O6Zn) into this plasma with He carrier gas, transparent flat ZnO films about 240 nm thick were successfully fabricated on glass substrates directly under a slit made into the cathode. Transmittance of the film is about 80% in the wavelength range from 400 to 600 nm. An XRD measurement revealed that these ZnO films had a c‐axis oriented polycrystalline structure. By increasing the substrate temperature from 250 to 400 °C, electrical resistivity of the film decreased from 0.42 Ωm to 9.4 × 10–4 Ωm. A high temperature of the substrate may change the growth pattern of ZnO film and its microstructure. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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