Abstract

The formation mechanism of red zone in casting silicon ingots was investigated. Oxygen and metal distribution in ingots of crystalline Si were determined and analyzed. It was found that metal impurities is not the only factor to form bottom low minority carrier lifetime region. Interstitial oxygen with relative high concentration also decreases carrier lifetime at ingot bottom.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.