Abstract
Ultrathin silicon dioxide layers have been fabricated by the plasma oxidation of silicon in ultra high vacuum. Temperatures from room temperature to 800°C have been used. Although the oxidation temperature has a strong affect on the oxidation rate, the silicon – silicon dioxide interface state densities are about the same, around 1011 l/eVcm2, no matter what temperature was used. The main difference between samples is the oxide charge, which gets significantly higher if the room temperature oxidation is used instead of temperatures from 600–800°C.
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