Abstract
Plasma oxidation of silicon in room temperature and in an ultrahigh vacuum has been found to be a useful tool in producing very thin silicon dioxide layers. The maximum thickness that can be reached, however, is only 1–1.1 nm. As the needed layer thickness is usually from 2 to 5 nm, the process has to be performed in several oxidation cycles. Using this method, a good thickness control can be achieved and the resulting MOS structures have relatively low surface state densities and a high breakdown field.
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