Abstract
Ultrathin silicon dioxide layers have been fabricated by the room temperature plasma oxidation of silicon in ultrahigh vacuum. Silicon–silicon dioxide interface state densities of 10 11 eV −1 cm −2 in the mid-gap can be reached without any annealing. The oxide charge, however, is then quite high. By using post metallization annealing in 300°C or post oxidation UHV annealing in 750°C the surface state densities can slightly be decreased. The oxide charge can be totally removed in 750°C. Neither of these annealings decrease the oxide thickness.
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