Abstract
Tantalum oxide (Ta2O5) thin films have been deposited on glass substrates and silicon wafers (100) by dc reactive magnetron sputtering and with a 99.995% pure tantalum target. The effect of the oxygen flow rate on the crystallinity and optical properties were investigated. The films were characterized by X-ray diffraction patterns, UV-Vis spectrophotometer and spectroscopic ellipsometry. The results show that the deposition rate of Ta2O5 thin films was decreased with the increase in oxygen flow rate. In addition, Ta2O5 thin films deposited at oxygen flow rate higher than 6 sccm could be exhibited sufficiently oxide thin film, the transmittance spectrum percentage indicated 80%, which corresponded to the obtained optical characteristic.
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