Abstract
A series of Tantalum Nitride (TaN) films under a reactive direct current magnetron sputtering method with a controlled total gas flow rate were prepared on aluminum oxide substrates. To find the nitrogen flow rate, which produced the minimum sheet resistance, TaN films deposited under a nitrogen gas flow ratio of 2.5%, 5%, 10%, 15%, 20%, 25% were characterized in terms of their structural and electrical properties. The optimum total gas flow rate was 60 sccm, revealing the lowest deviation of sheet resistance. Next, the durability and reliability at high temperatures, after heating and cooling cycles and exposure to the induced current, were tested. When the nitrogen flow ratio reaches 2.5%, it gets the maximum for the adhesion force, roughness, and deposition rate of the TaN film, and maximum values are 75.4 N, 1.1 nm, and 3.67 nm/min, respectively, and the sheet resistance of the TaN film reaches a minimum of 20.32 Ω/sq. The degradation behaviors and failure of TaN films were investigated by measuring the sheet resistance variation. To further explain the degradation of TaN films, additional analysis of their crystallinity was conducted. The results showed that TaN-based thin film resistors have high durability and reliability, and are suitable for embedded passive resistors.
Highlights
Tantalum nitride has the advantages of a wide adjustable resistance range, high temperature stability, low temperature coefficient of resistance, moderate strain factor and excellent wear resistance, and is widely used in aerospace, microelectronics, power machinery and other fields
The films are mainly face-centered δ-Tantalum Nitride (TaN) structure, and the preferred orientation differs depending on the nitrogen flow ratio
When the nitrogen flow ratio is 2.5%, the film is preferentially oriented in the face-centered cubic TaN (111)
Summary
Tantalum nitride has the advantages of a wide adjustable resistance range, high temperature stability, low temperature coefficient of resistance, moderate strain factor and excellent wear resistance, and is widely used in aerospace, microelectronics, power machinery and other fields. The reactive magnetron-sputtering method is used to deposit TaN films on Al2 O3 ceramic substrates, mainly to study the influence of nitrogen flow ratio on the structure and properties of the films, in order to further optimize the process to obtain TaN films with an excellent comprehensive performance. This kind of film forms the potential material for the manufacture of ceramic sensor composite substrates
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