Abstract
A reactive direct current magnetron sputtering method with a controlled total gas flow rate was used to fabricate thin films of tantalum nitride (TaN) on SiO2/Si and multilayer ceramic substrates. In order to identify the total gas flow rate that produced the lowest variation in the sheet resistance and the temperature coefficient of resistance (TCR), TaN films deposited under total gas flow rates of 30, 40, 60, and 80 sccm were characterized in terms of their structural and electrical properties. The optimum total gas flow rate was 60 sccm revealing the lowest deviation of sheet resistance and TCR. Next, the durability and reliability at high temperatures, after heating and cooling cycles, and exposure to induced current were tested. The degradation behaviors and failure of TaN films were investigated by measuring the sheet resistance variation. To further explain the degradation of TaN films, additional analysis of their crystallinity was conducted. The results showed that TaN-based thin film resistors have high durability and reliability and are suitable for embedded passive resistors.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
