Abstract
Effect of nitrogen doping on field emission characteristics of patterned diamond-like carbon (DLC) films was studied. The patterned DLC films were fabricated by the method reported previously [I. H. Shin and T. D. Lee, J. Vac. Sci. Technol. B 17, 690 (1999)]. Nitrogen doping in the DLC film was carried out by introducing N2 gas into the vacuum chamber during deposition. Level of doping was controlled by varying N2 flow rate up to 50 sccm. Nitrogen content in the films almost linearly increased with increasing N2 flow rate. Higher emission current density of 0.3–0.4 mA/cm2 was observed for the films with 6 at. % N than the undoped films, but the emission current density decreased with further increase of N contents. Some changes in CN bonding characteristics with increasing N contents were observed. The CN bonding characteristics which seem to affect the electron emission properties of these films were studied by Raman spectroscopy, x-ray photoemission spectroscopy and Fourier transform infrared spectroscopy. Electrical resistivity and optical band gap measurements showed consistence with the above analysis.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
