Field Electron Emission From Silicon Tip Arrays Coated With Nitrogen Doped DLC Films.

Abstract

In this presentation the effect of nitrogen doping of the diamond-like carbon (DLC) films on their electrical conductivity and electron emission properties has been studied. The DLC films were deposited by PE--CVD on the plane silicon wafers and silicon tip arrays. The silicon tip arrays were formed by wet chemical etch of n-type Si and sharpened using method of surface oxidation and removal of the oxide. The DLC films were deposited at room temperature fiom C€L,:H2:N2 gas mixture. Nitrogen content in gas mixture was varied within the range fiom 0 to 45%. Ilie electrical conductivity of DLC films and electron emission properties in dependence on deposition conrfitions have been investgated. For comparison of the emission properties of the structures with DLC filnls deposited in different conditions tlie threshold (onset) voltages, field enhancement factors, effective emission areas, calculated fiom Fowler-Nordlieh plots, have been used. It was obtained that for the stnrctures with nitrogen doped DLC films the emission appears at remarkably lower voltages and the calculated effective work function is on 4.5 eV less than for case of undoped DLC films. The model for explanation of the experimental results are presented and role of nitrogen-carbon bonds are also discussed.