Effect of NH 3 on the preparation of TiN x films by laser CVD using tetrakis-diethylamido-titanium

Abstract

Titanium nitride (TiN x ) films were prepared by laser chemical vapor deposition (LCVD) with tetrakis-diethylamido-titanium (TDEAT) and NH 3 as the source materials. The effects of the fraction of ammonia ( F N H 3 ) on the microstructure, preferred orientation and deposition rate were investigated. Non-oriented TiN x films with a cauliflower-like texture were obtained without NH 3, whereas (1 1 1), (2 0 0) and (2 2 0) preferred TiN x films in a single phase with facetted and square textures were obtained with NH 3 gas. The lattice parameter decreased slightly with increasing F N H 3 . The deposition rate ( R dep) of TiN x films with a deposition area of about 300 mm 2 increased with increasing F N H 3 , and attained the highest value of 90 μm h −1 at F N H 3 = 0.5, laser power ( P L) = 100 W and deposition temperature ( T dep) = 597 °C.